Study on non-linearity response of 4H-SiC APD

CVD growth of 3C-SiC on 4H-SiC substrate

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...

Non-Contact Characterization of Recombination Processes in 4H-SiC∗

Carrier decay transients in 4H-SiC n-type and p-type epilayers have been characterized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 μm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.

Graphene formation mechanisms on 4H-SiC(0001)

EFFECT OF HIGH-ENERGY PROTONS ON 4H-SiC RADIATION DETECTORS

We present investigation of high energy radiation detectors based on 4H-SiC as influenced by irradiation with 24 GeV proton doses of up to 10 cm. SiC detectors have been produced from n-type 4H-SiC epilayers grown on the top of the n-type substrate. They were supplied with a nickel ohmic contact on the back surface and a gold Schottky contact on the top. Activities and numbers of Be and Na atom...

Annealing of multivacancy defects in 4H-SiC

The annealing behavior of defects observed in electron paramagnetic resonance EPR and photoluminescence PL is discussed. We consider the divacancy the P6/P7 EPR centers and a previously unreported EPR center that we suggest is a VC-VSi-VC trivacancy and their relationship with each other and with the UD1–3 series of PL lines near 1 eV. We observe that the divacancy and the UD2 PL lines annealin...